학술논문
Precise extraction of emitter resistance from an improved floating collector measurement
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 42(2):266-273 Feb, 1995
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
A distributed transistor model is developed which comprehensively explains the non-linear characteristics of floating collector measurements. The non-linearity is attributed to the fact that the intrinsic collector current is not zero when the collector terminal is opened. Based on this understanding, a new procedure to extract emitter resistance is proposed. Combining the measurements of forward and reverse current gains and intrinsic base sheet resistance, the ambiguity in the conventional floating collector measurement is diminished and hence the accuracy is significantly improved.ETX