학술논문
High Density and High Reliability Chain FeRAM with Damage-Robust MOCVD-PZT Capacitor with SrRuO3/IrO2 Top Electrode for 64Mb and Beyond
Document Type
Conference
Author
Source
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on. :126-127 2006
Subject
Language
ISSN
0743-1562
2158-9682
2158-9682
Abstract
An excellent 64Mb chain FeRAMtrade using a highly reliable capacitor with damage-robust MOCVD-PZT and SrRuO 3 /IrO 2 top electrode (TE) is successfully demonstrated for the first time. A very large signal margin of 540mV at 1.8V is achieved for the capacitor as small as 0.19μm 2 . Large sensing margin is well maintained after 85degC storage, and 10 years lifetime is successfully guaranteed. The combination of damage-robust MOCVD-PZT and optimized SrRuO 3 /IrO 2 TE as well as a sophisticated `chain' structure that has a small bit line capacitance (Cb) nature shows excellent reliability and scalability. This work demonstrates that high density 256Mb chain FeRAM with 0.1 μm 2 planar capacitor can be realized