부산대학교 도서관

NPN latch-up memory selector devices featuring SiGe hetero-junctions are fabricated and measured electrically. 25% Ge is introduced into the floating base layer by epitaxy. The performance of this device is compared against an implanted Si stack. It is observed that the addition of 25% Ge in the floating base layer of these latch-up selector devices boosts the non-linearity by more than $\times {100}$ and enables abrupt latch-up below 2V. TCAD simulations comparing drift-diffusion and hydro-dynamic models are used to validate our understanding of the device.