학술논문
Non-Volatile RRAM Embedded into 22FFL FinFET Technology
Document Type
Conference
Author
Golonzka, O.; Arslan, U.; Bai, P.; Bohr, M.; Baykan, O.; Chang, Y.; Chaudhari, A.; Chen, A.; Clarke, J.; Connor, C.; Das, N.; English, C.; Ghani, T.; Hamzaoglu, F.; Hentges, P.; Jain, P.; Jezewski, C.; Karpov, I.; Kothari, H.; Kotlyar, R.; Lin, B.; Metz, M.; Odonnell, J.; Ouellette, D.; Park, J.; Pirkle, A.; Quintero, P.; Seghete, D.; Sekhar, M.; Gupta, A.S.; Seth, M.; Strutt, N.; Wiegand, C.; Yoo, H.J.; Fischer, K.
Source
2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T230-T231 Jun, 2019
Subject
Language
ISSN
2158-9682
Abstract
This paper presents key specifications of RRAM-based nonvolatile memory embedded into Intel 22FFL FinFET Technology. 22FFL is a high performance, ultra low power technology developed for mobile and RF applications providing extensive high voltage and analog support and high design flexibility combined with low manufacturing costs [1]. Embedded RRAM technology presented in this paper achieves 10 4 cycle endurance combined with 85°C 10-year retention and high die yield. Technology data retention, endurance and yield are demonstrated on 7.2Mbit arrays. We describe device characteristics, bit cell integration into the logic flow, as well as key considerations for achieving high endurance and retention properties.