부산대학교 도서관

We present fireable n- and p-type passivating contacts for silicon solar cells, using a tunnelling oxide and a doped SiC x layer. Rapid annealing is used to crystallize the layer and to activate its dopants. Subsequent hydrogenation reveals a fast passivation of interfacial defects and a slow passivation of bulk defects created by the rapid annealing in our floating zone silicon. We apply the contacts in proof-of-concept solar cells with ITO/ Ag contacts, resulting in efficiencies above 20%. Towards an industrially more relevant process using a fireable metallization, we present preliminary results on contacting through the nitride layer with aluminium.