학술논문
Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration
Document Type
Conference
Author
Fenouillet-Beranger, C.; Acosta-Alba, P.; Mathieu, B.; Kerdiles, S.; Samson, M-P.; Previtali, B.; Rambal, N.; Lapras, V.; Ibars, F.; Roman, A.; Kachtouli, R.; Besson, P.; Nieto, J-P.; Pasini, L.; Brunet, L.; Aussenac, F.; Hartmann, J-M.; Mazzamuto, F.; Toque-Tresonne, I.; Huet, K.; Batude, P.; Vinet, M.
Source
2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2016 IEEE. :1-2 Oct, 2016
Subject
Language
Abstract
In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF2). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated for a 28nm node backend metal 1 design rules technology both from morphological and electrical perspectives. This study highlights the interest of ns laser anneal for CoolCube™ 3D integration.