학술논문
1.2kV class SiC MOSFETs with improved performance over wide operating temperature
Document Type
Conference
Author
Source
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on. :297-300 Jun, 2014
Subject
Language
ISSN
1063-6854
1946-0201
1946-0201
Abstract
In this paper, we report on 1.2kV SiC MOSFETs rated to T j, max =200°C, exhibiting improved performance characteristics across operating temperature. Our devices show stable, rugged and reliable operation when subjected to industry standard qualification tests. Low on-resistance of 35mOhm/79mOhm at T j =25°C and 47mOhm/103mOhms at T j =150°C are shown for 0.1cm 2 and 0.2cm 2 die. 1000 hour High-Temperature Gate-Bias (HTGB) tests at T j =200°C show excellent threshold stability with less than 5% parametric shift observed. High-Temperature Reverse Bias (HTRB) at T j =200°C/V DS =960V also show stable and reliable operation. Single-pulse avalanche energies of over E Av =1.75J are obtained with 0.1cm 2 MOSFETs.