학술논문
Back-end 3D integration of HfO2-based RRAMs for low-voltage advanced IC digital design
Document Type
Conference
Author
Source
Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) IC Design & Technology (ICICDT), 2013 International Conference on. :235-238 May, 2013
Subject
Language
ISSN
2381-3555
Abstract
This paper gives an overview of our research work on Oxide Resistive switching memory (OxRAM) at technology and design level. The OxRAM technology has been developed in order to be co-integrated with low-voltage advanced CMOS technologies. The device electrical characteristics show: (i) a switching time of 100ns at 1V, (ii) an excellent data retention at 150°C and (iii) a high endurance up to 10 8 cycles. The second part of this paper focuses on circuit design. The benefits of 3D integration of non-volatile devices on CMOS are highlighted. Performance and area gains are discussed as well as new application features.