학술논문
40 Gbit/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum wells
Document Type
Conference
Author
Source
International Conference on Indium Phosphide and Related Materials, 2005 Indium Phosphate and Related Materials Indium Phosphide and Related Materials, 2005. International Conference on. :554-557 2005
Subject
Language
ISSN
1092-8669
Abstract
We demonstrate 40 Gbit/s operation of an InP-based 1.3 mum laser-integrated electroabsorption modulator using an identical InGaAlAs quantum well stack in both device sections. Characteristic data are 22 mA threshold current and 35 dB side-mode suppression ratio