학술논문
Investigation of charged defects in LPCVD-SiO/sub x/N/sub y/ thin films deposited on [111] Si
Document Type
Conference
Author
Source
2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547) Semiconductor conference Semiconductor Conference, 2001. CAS 2001 Proceedings. International. 2:519-522 vol.2 2001
Subject
Language
Abstract
The interface charged defects in amorphous silicon oxynitride (SiO/sub x/N/sub y/) films deposited on [111] Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860/spl deg/C and at a pressure of 400 mTorr, using a mixture of SiCl/sub 2/H/sub 2/-NH/sub 3/-N/sub 2/O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiO/sub x/N/sub y//Si interface, which leads to suppression of defects generation.