학술논문
Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors
Document Type
Conference
Author
Source
2019 International Conference on IC Design and Technology (ICICDT) IC Design and Technology (ICICDT), 2019 International Conference on. :1-5 Jun, 2019
Subject
Language
Abstract
In this study, we describe how to obtain high-quality Al 2 O 3 dielectric thin films and their implementation in In 2 O 3 thin film transistors by combining plasma treatment and combustion process at low temperatures (250 °C). The single layer Al 2 O 3 dielectric formed by this technique exhibited a higher areal capacitance and a lower leakage level compared with those of conventional solution-processed Al 2 O 3 . The resulting TFTs presented a superior electrical performance at a low operating voltage of 2 V, with a positive threshold voltage of 0.39 V, a subthreshold swing of 0.V/decade, an On/Off ratio of 1.8×10 4 , and a superior mobility of 136 cm 2 V −1 s −1 .