학술논문

A High Dynamic Range 128 × 120 3-D Stacked CMOS SPAD Image Sensor SoC for Fluorescence Microendoscopy
Document Type
Periodical
Source
IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 57(6):1649-1660 Jun, 2022
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Single-photon avalanche diodes
Imaging
Endoscopes
Registers
Random access memory
Logic gates
Dynamic range
3-D stacking
chip-on-tip
CMOS image sensor (CIS)
fluorescence lifetime imaging microscopy (FLIM)
high dynamic range (HDR)
microendoscopy
single-photon avalanche diode (SPAD)
system-on-chip (SoC)
time gating
time resolved
Language
ISSN
0018-9200
1558-173X
Abstract
A miniaturized 1.4 mm $\times \,\, 1.4$ mm, $128\times120$ single-photon avalanche diode (SPAD) image sensor with a five-wire interface is designed for time-resolved fluorescence microendoscopy. This is the first endoscopic chip-on-tip sensor capable of fluorescence lifetime imaging microscopy (FLIM). The sensor provides a novel, compact means to extend the photon counting dynamic range (DR) by partitioning the required bit depth between in-pixel counters and off-pixel noiseless frame summation. The sensor is implemented in STMicroelectronics 40-/90-nm 3-D-stacked backside-illuminated (BSI) CMOS process with 8- $\mu \text{m}$ pixels and 45% fill factor. The sensor capabilities are demonstrated through FLIM examples, including ex vivo human lung tissue, obtained at video rate.