학술논문

Graphitization of n-type polycrystalline silicon carbide and its application for micro- supercapacitors
Document Type
Conference
Source
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference Solid-State Sensors, Actuators and Microsystems Conference (TRANSDUCERS), 2011 16th International. :1879-1882 Jun, 2011
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Signal Processing and Analysis
Power, Energy and Industry Applications
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Robotics and Control Systems
Nitrogen
Carbon
Oxidation
Silicon
Supercapacitors
Supercapacitor
MEMS
silicon carbide
graphitization
graphitic carbon
Language
ISSN
2159-547X
2164-1641
Abstract
Owing to the high power density, long life time and environmentally friendly characteristics, micro-supercapacitors have attracted much attention for powering microelectromechanical systems (MEMS) devices. This paper describes the fabrication and performance of a planar micro-supercapacitor. The fabrication process is large scale and IC compatible, and thus it can be integrated with microelectronics. The device, made of high conductivity graphitic carbon (GC) on nitrogen-doped polycrystalline 3C-SiC (poly-SiC), has very high charge/discharge rates. The incorporated nitrogen in the carbon electrode induces pseudo-capacitance and realizes nearly twice the specific capacitance value reported on carbon nanotube (CNT) supercapacitors.