학술논문
A GaAs MMIC Single-Chip RF-MEMS Switched Tunable LNA
Document Type
Conference
Author
Source
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE. :1-4 Oct, 2013
Subject
Language
ISSN
1550-8781
2374-8443
2374-8443
Abstract
This paper presents a novel compact circuit design of an RF-MEMS frequency-agile LNA realized in a GaAs MMIC process that also includes a BCB cap type of wafer-level package. The uncapped/BCB capped single-chip GaAs MEMS tunable LNA circuits which can be matched at different frequency bands (e.g at X-band and Ku-/K-band) present similar in-band gain, linearity and noise figure over 30-60% wide tuning ranges (the uncapped MEMS tunable LNA has an NF≤3 dB at 14-21 GHz with ≤0.6 dB higher NF at 9-13 GHz). The validated MMIC designs are first time realizations of uncapped/0-level packaged MEMS tunable (wide-band/narrow-band) LNAs in a GaAs foundry process.