학술논문

High-contrast electron-transfer GaAs-AlGaAs multiple-quantum-well waveguide modulator
Document Type
Periodical
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 3(4):327-329 Apr, 1991
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Quantum well devices
Voltage
Electrons
Intensity modulation
Absorption
Reservoirs
Photoconductivity
Gallium arsenide
Microscopy
Stark effect
Language
ISSN
1041-1135
1941-0174
Abstract
The development of a GaAs-AlGaAs multiple quantum well electron transfer waveguide modulator is reported. On-off ratios as high as 75:1 are obtained at 864.5 nm of an applied voltage of -5 to 10 V. It is shown that the wavelength and voltage characteristics of the device can be successfully interpreted in terms of the calculated energy band diagram.ETX