학술논문

Ultra-Low Power 60 GHz Class-C Frequency Tripler in 22-nm FDSOI CMOS Technology
Document Type
Conference
Source
2024 IEEE 15th Latin America Symposium on Circuits and Systems (LASCAS) Circuits and Systems (LASCAS), 2024 IEEE 15th Latin America Symposium on. :1-5 Feb, 2024
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineering Profession
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Power demand
Silicon-on-insulator
Harmonic analysis
CMOS technology
Generators
Robustness
System-on-chip
CMOS process
FDSOI
frequency multiplier
localization
millimeter wave integrated circuits
Language
ISSN
2473-4667
Abstract
This paper presents a 60 GHz class-C frequency tripler, implemented in 22-nm FDSOI (fully depleted silicon-on-insulator) CMOS technology, for ultra-low power and highly integrated radios used in millimeter-wave indoor localization applications. The tripler employs a multi-stage transformer-coupled differential design with band-pass filters to selectively extract and amplify the power at the 3rd harmonic $(3\mathrm{f}_{0})$ tone while attenuating powers at fundamental $(\mathrm{f}_{0})$ and second harmonic $(2\mathrm{f}_{0})$ tones. An integrated bias generator with resistor trimming, improves the tripler robustness to the on-chip process and mismatch variations. The tripler exhibits a maximum conversion gain (CG) and peak conversion efficiency (CE) of -0.7 dB and 12.63%, respectively, at 60 GHz, and a 3-dB bandwidth of 3.6 GHz with a total DC power consumption $(\mathrm{P}_{\text{DC}})$ of 7.9mW at 0.8 V supply. A harmonic rejection ratio (HRR) exceeding 45 dB for fundamental and second harmonic tones is achieved. The maximum saturated output power $(\mathrm{P}_{\text{SAT}})$ obtained is 0.9 dBm. The circuit occupies 0. $4 \text{mm}^{2}$ area, including pads.