학술논문

Photoconductive Switch With High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond
Document Type
Periodical
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(7):1070-1073 Jul, 2020
Subject
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Diamond
Nitrogen
Absorption
Photoconductivity
Optical switches
Optical reflection
Measurement by laser beam
Optoelectronic devices
photoconductivity
wide band gap semiconductors
Language
ISSN
0741-3106
1558-0563
Abstract
To mymargin evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration of sub-bandgap triggered diamond PCSS, which when scaled to higher voltage, can compete with and even surpass performance of existing ultraviolet-triggered diamond PCSS. This work suggests that nitrogen-doped diamond is a promising candidate for high-power, fast optoelectronic devices.