학술논문
Commercial wideband MMIC low noise amplifier with 50nm gate-length E-mode InGaAs PHEMT
Document Type
Conference
Author
Source
2012 IEEE/MTT-S International Microwave Symposium Digest Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. :1-3 Jun, 2012
Subject
Language
ISSN
0149-645X
Abstract
This paper reports a wideband MMIC low noise amplifier using a 50nm L g E-mode InGaAs PHEMT technology. It demonstrates simultaneous 22dB S21 gain and 1.0dB noise figure at 24GHz operation. The MMIC was designed for 18–35GHz bandwidth; however, noise figure is low and gain is appreciable from 4–40GHz. The amplifier survived being separately subjected to high-power bursts (18dBm P in , 60-sec), and elevated temperature burn-in (85°C for 24-hours) to verify its power handling capability and long-term reliability. The overall amplifier performance, yield, and reliability show that this InGaAs PHEMT technology has the requisite figures-of-merits to advance receiver system performance in hostile environments, as well as the increasingly more demanding commercial environment.