학술논문
Tuning in to RF MEMS
Document Type
Periodical
Author
Source
IEEE Microwave Magazine IEEE Microwave Microwave Magazine, IEEE. 10(6):55-72 Oct, 2009
Subject
Language
ISSN
1527-3342
1557-9581
1557-9581
Abstract
Radio frequency (RF) microelectromechanical systems (MEMS) switches and varactors, developed in 1996-2002 for lowloss switching/routing circuits and X-band (8-12 GHz) to millimeter-wave (mm-wave) (30-120 GHz) phase shifters, have seen increasing applications in tunable fi lters, tunable antennas, and reconfigurable matching networks. RF MEMS devices are well covered in [1] and [2] and consist of four different designs (Figure 1): 1) Metal-contact switcheswith excellent performance from dc to 100 GHz (see Radant MEMS [3]).