학술논문

High-temperature SOI-based gate driver IC for WBG power switches
Document Type
Conference
Source
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE. :1768-1775 Mar, 2013
Subject
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Communication, Networking and Broadcast Technologies
Computing and Processing
Logic gates
Vehicles
Voltage control
Regulators
Resistors
Capacitors
Circuit faults
Language
ISSN
1048-2334
Abstract
High-temperature integrated circuits fill a need in applications where there are obvious benefits to reduced thermal management or where circuitry is placed away from temperature extremes. Examples of these applications include aerospace, automotive, power generation, and well-logging. This work focuses on automotive applications in which the growing demand for hybrid electric vehicles (HEVs), Plug-in-hybrids (PHEVs), and Fuel-cell vehicles (FCVs) has increased the need for high-temperature electronics that can operate at the extreme ambient temperatures that exist under the hood of these vehicles, which can be in excess of 150°C. Silicon carbide (SiC) and other wide-bandgap power switches that can function at these temperature extremes are now entering the market. To take full advantage of their potential, high-temperature capable circuits that can also operate in these environments are required.