학술논문
22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications
Document Type
Conference
Author
Carter, R.; Mazurier, J.; Pirro, L.; Sachse, J-U.; Baars, P.; Faul, J.; Grass, C.; Grasshoff, G.; Javorka, P.; Kammler, T.; Preusse, A.; Nielsen, S.; Heller, T.; Schmidt, J.; Niebojewski, H.; Chou, P-Y.; Smith, E.; Erben, E.; Metze, C.; Bao, C.; Andee, Y.; Aydin, I.; Morvan, S.; Bernard, J.; Bourjot, E.; Feudel, T.; Harame, D.; Nelluri, R.; Thees, H.-J.; M-Meskamp, L.; Kluth, J.; Mulfinger, R.; Rashed, M.; Taylor, R.; Weintraub, C.; Hoentschel, J.; Vinet, M.; Schaeffer, J.; Rice, B.
Source
2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :2.2.1-2.2.4 Dec, 2016
Subject
Language
ISSN
2156-017X
Abstract
22FDX™ is the industry's first FDSOI technology architected to meet the requirements of emerging mobile, Internet-of-Things (IoT), and RF applications. This platform achieves the power and performance efficiency of a 16/14nm FinFET technology in a cost effective, planar device architecture that can be implemented with ∼30% fewer masks. Performance comes from a second generation FDSOI transistor, which produces nFET (pFET) drive currents of 910μΑ/μm (856μΑ/μm) at 0.8 V and 100nA/μm Ioff. For ultra-low power applications, it offers low-voltage operation down to 0.4V V min for 8T logic libraries, as well as 0.62V and 0.52V V min for high-density and high-current bitcells, ultra-low leakage devices approaching 1pA/μm I off , and body-biasing to actively trade-off power and performance. Superior RF/Analog characteristics to FinFET are achieved including high f T /f MAx of 375GHz/290GHz and 260GHz/250GHz for nFET and pFET, respectively. The high f MAx extends the capabilities to 5G and milli-meter wave (>24GHz) RF applications.