학술논문
SiGe HBT with fx/fmax of 505 GHz/720 GHz
Document Type
Conference
Author
Heinemann, B.; Rucker, H.; Barth, R.; Barwolf, F.; Drews, J.; Fischer, G. G.; Fox, A.; Fursenko, O.; Grabolla, T.; Herzel, F.; Katzer, J.; Korn, J.; Kruger, A.; Kulse, P.; Lenke, T.; Lisker, M.; Marschmeyer, S.; Scheit, A.; Schmidt, D.; Schmidt, J.; Schubert, M. A.; Trusch, A.; Wipf, C.; Wolansky, D.
Source
2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :3.1.1-3.1.4 Dec, 2016
Subject
Language
ISSN
2156-017X
Abstract
An experimental SiGe HBT technology featuring fT/fmax/BVCEO = 505 GHz/720 GHz/1.6 V and a minimum CML ring oscillator gate delay of 1.34 ps is presented. The improved speed compared to our previous SiGe HBT developments originates primarily from an optimized vertical profile, an additional decrease of the base and emitter resistance which is made possible by combining millisecond annealing with a low-temperature backend, and from lateral device scaling.