학술논문
A 22nm FDSOI Technology Optimized for RF/mmWave Applications
Document Type
Conference
Author
Ong, S.N.; Lehmann, S.; Chow, W.H.; Zhang, C.; Schippel, C.; Chan, L.H.K.; Andee, Y.; Hauschildt, M.; Tan, K.K.S.; Watts, J.; Lim, C.K.; Divay, A.; Wong, J.S.; Zhao, Z.; Govindarajan, M.; Schwan, C.; Huschka, A.; Bcllaouar, A.; LOo, W.; Mazurier, J.; Grass, C.; Taylor, R.; Chew, K.W.J.; Embabi, S.; Workman, G.; Pakfar, A.; Morvan, S.; Sundaram, K.; Lau, M. T.; Rice, B.; Harame, D.
Source
2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Radio Frequency Integrated Circuits Symposium (RFIC), 2018 IEEE. :72-75 Jun, 2018
Subject
Language
ISSN
2375-0995
Abstract
This paper describes a 22nm FDSOI technology optimized for RF/mmWave applications. The offering consists of high speed mmWave FET transistors, and a thick dual copper back-end. The offering is integrated with a low power digital technology (0.4V) and is extremely simple with less than 40 masks for an 8M process. The best performance for nFET/pFET f T is 347/275 GHz and for f MAX is 371/299 GHz. The RF cell layouts enable higher performance and improved wiring flexibility for the higher currents demanded in mmWave applications. The optimized pFET layout utilizes stress to increase performance while minimizing the parasitic capacitance. A strong pFET distinguishes this technology from many others enabling more efficient “complementary” RF/mmWave design. This combination of high performance mmWave FET transistors, low voltage logic, and low complexity mask build makes it ideal for a large suite of RF/mmWave application including IOT, 5G, and Radar