부산대학교 도서관

This work presents TCAD simulation for InGaN multiple quantum well (MQW) solar cell at high temperature and high solar concentration that have recently been reported. A MQW device with 40 periods of In0.12Ga0.88N/GaN quantum well stack is simulated. Simulation results are in close agreement with experimental I-V data measured up to 450 °C and under concentration of up to 300 suns. The impact of polarization charges at the nitride hetero-interface is also investigated. The internal quantum efficiency (IQE) is simulated and compared with experimental data as well. A drop in IQE with increasing polarization screening factor is observed, which demonstrates that polarization effects reduce the carrier collection probability of this device structure.