학술논문

High-frequency transistors by the diffused-meltback process employing three impurities
Document Type
Periodical
Source
IRE Transactions on Electron Devices IRE Trans. Electron Devices Electron Devices, IRE Transactions on. 5(2):117-117 Apr, 1958
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Transistors
Electron tubes
Metals
Switching circuits
Impurities
Gain
Performance evaluation
Language
ISSN
0096-2430
2379-8661