학술논문

Optical memory based on GeSbTe-O alloys
Document Type
Conference
Source
2005 2nd International Conference on Electrical and Electronics Engineering Electrical and Electronics Engineering Electrical and Electronics Engineering, 2005 2nd International Conference on. :416-418 2005
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Robotics and Control Systems
Optical films
Optical recording
Tellurium
Crystallization
Reflectivity
Optical materials
Phase change memory
CD recording
X-ray diffraction
Optical diffraction
optical memory
reflectance
crystallization process
Language
Abstract
The purpose of this study was to develop new active material for phase-change optical memory (Compact Disks) which would make it possible to record information with 3 or 4 levels of reflectivity and not only 2, as is the case now. With this goal in mind, the optical properties (reflectance) of Ge/sub 1/Sb/sub 2/Te/sub 4/ films doped with oxygen were investigated. X-ray diffraction shows that the crystalline phase for films with 2-8% oxygen corresponds to a Ge/sub 1/Sb/sub 2/Te/sub 4/ composition. However, the crystalline phase for films with more than 10% oxygen corresponds to Sb/sub 2/Te/sub 3/. This phase segregation in films containing more than 10% oxygen gives, as a result, an increase in nucleation times and in laser-induced crystallization times, making multilevel recording possible, that is to say, optical memory with ternary or quaternary code instead of just binary code.