학술논문
Guidelines for Overcoming the Practical Limitations for the Fabrication of THz Sources with GaN Planar Gunn Diodes
Document Type
Conference
Author
Source
2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2024 8th IEEE. :1-3 Mar, 2024
Subject
Language
Abstract
Gunn oscillations are expected to appear in GaN at high electric fields due to its negative differential mobility, but they have never been observed experimentally due to the large voltages to be applied. We propose a way to avoid such practical problems by fabricating planar Gunn diodes with shaped nanochannels which allow to reduce the total DC current and focus the electric field in regions far from the contacts.