학술논문

Radiation Tolerance of RHBD techniques on a SiGe BiCMOS 350 nm ASIC technology
Document Type
Conference
Source
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2019 19th European Conference on. :01-11 Sep, 2019
Subject
Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Space vehicles
Radiation effects
Observatories
Radiation hardening (electronics)
Current measurement
Aerospace electronics
Extraterrestrial measurements
TID
SEL
SEE
RHBD
ASIC
BiCMOS technology
SiGe heterojunction bipolar transistor
WFEE
X-IFU
ATHENA observatory
space electronics
Language
ISSN
1609-0438
Abstract
This work presents the radiation tolerance of a Warm Frond-End Electronics subsystem (WFEE), using Radiation Hardening By Design (RHBD) techniques based on a SiGe BiCMOS 350 nm ASIC technology. The subsystem is in the context of a developing X-Ray space observatory of ESA, named ATHENA, planned to operate in a halo orbit around the second Lagrangian point (L 2 Sun - Earth) with 5-year lifetime at the end of the next decade. The WFEE is a mixed electronic system, including analog devices, such as low noise amplifier and current sources for amplifying and biasing cryogenic stages, and also integrating digital devices: serial decoders RS485/ I 2 C for configuring the current sources. Because of extreme radiation space environment, different RHBD techniques have been used to improve the radiation tolerance of the WFEE electronics. The tolerance against radiation effects TID and SEL have been assessed. The evolution of the main parameters of the amplifier (gain and noise) and of the current sources (output current and noise) with respect to different dose levels has also been measured. The measurements after irradiations show that the RHBD techniques are very effective for improving radiation hardening capabilities of electronic circuits based on this technology.