학술논문
Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors
Document Type
Conference
Source
2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668) Electron devices and solid-state circuits Electron Devices and Solid-State Circuits, 2003 IEEE Conference on. :137-140 2003
Subject
Language
Abstract
The dead space effect under near-breakdown conditions in GaInP/GaAs composite collector double heterojunction bipolar transistor (DHBT) is investigated analytically. Using the dead space corrected model, the breakdown voltage is found to decrease with GaAs spacer thickness as reported from experiments. The common-mode emitter IV characteristics for the DHBT are simulated until the onset of multiplication with good agreement with reported experimental results. A proposed optimised structure is simulated with comparably good turn-on I-V characteristics and improved breakdown performance.