학술논문

Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)

Document Type

Periodical

Author

Barbara De Salvo; Gerardi, C.; van Schaijk, R.; Lombardo, S.A.; Corso, D.; Plantamura, C.; Serafino, S.; Ammendola, G.; van Duuren, M.; Goarin, P.; Mei, W.Y.; van der Jeugd, K.; Baron, T.; Gely, M.; Mur, P.; Deleonibus, S.

Source

IEEE Transactions on Device and Materials Reliability IEEE Trans. Device Mater. Relib. Device and Materials Reliability, IEEE Transactions on. 4(3):377-389 Sep, 2004

Subject

Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Nonvolatile memory
Silicon
Nanocrystals
SONOS devices
Random access memory
Material storage
Application specific integrated circuits
Technology forecasting
Production
Guidelines
Flash
nonvolatile memories (NVMs)
reliability
silicon nanocrystals
SONOS

Language

ISSN

1530-4388
1558-2574

Abstract

In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated.

Online Access

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