부산대학교 도서관

In this work, arrays of two transistor (2T) and compact SONOS memory cells are presented together with an extensive reliability investigation. SONOS, which stands for semiconductor-oxide-nitride-oxide-semiconductor, is a non-volatile memory concept, which has recently regained strong attention because floating gate flash has reached its scaling limits. The better scaling perspective, together with the ease of integration in a base line CMOS process, makes SONOS an excellent candidate for embedded flash in future CMOS generations. This is especially true for the compact cell variant, which consists of a merged access gate (AG) and control gate (CG), giving extra advantages like smaller cell size and the reduction of short channel effects compared with the discrete two transistor variant.