부산대학교 도서관

This article presents a low random noise, a low-power, and a high-speed 2-mega pixels (Mp) global-shutter (GS)-type CMOS image sensor (CIS) using an advanced dynamic random access memory (DRAM) technology. GS CIS is one of the alternatives to solve image distortion issues caused by a conventional rolling-shutter (RS) CIS operation, since a 2-D image data can be simultaneously sampled by the in-pixel analog memory. To achieve a high-performance GS CIS, we proposed a novel architecture for digital pixel sensor (DPS) which is a high-speed GS operation CIS with a pixel-wise analog-to-digital converter (ADC) and an in-pixel digital memory. The major technologies of the proposed DPS can be summarized as follows: 1) two large coupling capacitors with mature DRAM technology; 2) extremely narrow pitch Cu-to-Cu (C2C) bond; and 3) finally low-powered ADC with a near sub-threshold operation. A perfect auto-zero operation for ADC is implemented using two DRAM capacitors, and a large number of transistors have to be integrated in the single pixel for realizing pixel-level ADC. Thus, each pixel has two fine-pitch C2C interconnections. This makes it possible to realize wafer-level stacked unit pixel. The proposed DPS with low-power consuming analog circuits has been successfully designed and developed for extremely fast-readout speed of max. 1200 frames per second (fps) and high sensitivity for low-illumination conditions.