학술논문

Finite element stress modeling of InGaAsP/InP lasers
Document Type
Conference
Source
1995 53rd Annual Device Research Conference Digest Device research Device Research Conference, 1995. Digest. 1995 53rd Annual. :150-151 1995
Subject
Components, Circuits, Devices and Systems
Finite element methods
Indium phosphide
Laser modes
Tensile stress
Laser theory
Physics
Thermal stresses
Dielectrics
Solid modeling
Geometrical optics
Language
Abstract
InGaAsP/InP lasers operating at 1.3/spl mu/m and 1.55/spl mu/m wavelength are used currently in many long haul and local loop communication systems. In addition to demands on the performance characteristics of these lasers, their long-term reliability under the operating conditions should also be satisfactory. Strain is one of many factors that can affect laser reliability. The principal objective of the current work is to construct processing related thermal stresses in InP based laser structures.