학술논문
An Assessment of Parallel Connected Silicon Carbide based Electronic Switches
Document Type
Conference
Author
Source
2019 IEEE CHILEAN Conference on Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON) Electrical, Electronics Engineering, Information and Communication Technologies (CHILECON), 2019 IEEE CHILEAN Conference on. :1-7 Nov, 2019
Subject
Language
Abstract
In this paper, an analysis of the behavior of an electronic switch using SiC-MOSFET semiconductors connected in parallel to be able to raise the working power of the electronic switch is presented. In regards to detect any problems of parallel operation of SiC-MOSFET, the current’s switching waveforms of each device and their corresponding sum were detailed observed in through experimental implementations in a bidirectional switch. Source current of the parallel SiC-MOSFET with separate gate driver, drain current of those with separate gate driver, and drain current of one with single gate driver were examined. Even though two heat sinks were separated and switching frequency was 156 kHz, the temperature of the two SiC-MOSFET was 36°C in ambient temperature of 25°C exhibiting excellent thermal stability. Switching waveforms of drain current of the parallel SiC-MOSFET with single gate driver gave the best results.