학술논문

Ultra-thin quantum wells and fractional monolayer quantum dots of II-IV semiconductors for optoelectronic applicatons
Document Type
Conference
Source
Proceedings of LFNM 2005. 7th International Conference on Laser and Fiber-Optical Networks Modeling, 2005. Laser and Fiber-Optical Networks Modeling, 2005. Proceedings of LFNM 2005. 7th International Conference on. :320-324 2005
Subject
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Quantum dots
US Department of Transportation
Zinc compounds
Epitaxial growth
Atomic layer deposition
Surface reconstruction
Fluctuations
Shape
Buffer layers
Substrates
Language
Abstract
CdTe/ZnTe and CdSe/ZnSe ultra-thin quantum wells (UTQW) with thickness of few monolayers present very strong excitonic emission and can be combined to cover the red-blue spectral range. They are grown by atomic layer epitaxy and the emission from thickness fluctuations can be completely avoided in many cases by choosing the appropriate growth parameters. Submonolayer coverage of CdSe produces fractional monolayer quantum dots (FMQD) which present very narrow blue emission, indicating a high degree of uniformity in size and shape. These UTQWs and FMQDs appear as promising candidates for the elaboration of red to blue light emission devices based on II-VI compounds