부산대학교 도서관

As an essential technique to achieve selective p-type doping for silicon carbide power electronic devices, implantation of aluminum at an elevated temperature of 400-600°C has been widely adopted for higher dose than 1.0E15 cm -2 to avoid amorphization that would happen at room temperature implantation. In this work, an alternative technique has been tried to enhance the aluminum implantation dose limit at room temperature. By splitting the total dose to two smaller doses and performing activation annealing after each implantation, the crystal quality of the implanted region has been recovered effectively as proven by the high resolution X-ray diffraction results, for a total dose of 1.2E15 cm -2 .