학술논문
Test/characterization procedures for high density silicon RAMs
Document Type
Conference
Author
Source
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International. XXV:62-63 1982
Subject
Language
Abstract
Diagnostic procedures which identify and quantify circuit marginalities and process sensitivities of DRAMs will be discussed. The use of fail counts, bit fail maps and parametric data in the development of the 32, 36 and 64Kb RAMs will be described.