학술논문
Enhancing the electromigration resistance of copper interconnects
Document Type
Conference
Author
Source
Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Interconnect technology Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International. :162-164 2003
Subject
Language
Abstract
Various factors such as grain boundary/surface diffusion as well as structural properties of materials are known to affect the final electro-migration (EM) behavior of copper interconnections. Results presented in this paper show that the barrier layer has a strong influence in controlling the width of EM failure distributions. EM tests of samples with alternate barrier, fill and capping layers show that atomic layer chemical vapor deposited (ALCVD) barrier and/or metallic cap layers are key to realize structures with superior EM lifetimes.