학술논문
Unique measurement to monitor the gate oxide lifetime indicator, case studies
Document Type
Conference
Author
Source
Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) Physical and failure analysis of integrated circuits Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the. :156-160 2001
Subject
Language
Abstract
Previous works (Gagnard and Bonnaud, Microelectron. Reliability vol. 39, pp. 75-763, 1999, and Proc. SPIE vol. 4182, pp. 142-50, 2000) demonstrated the possibility of realization of the gate oxide lifetime by a unique measurement based on leakage current. This indicator, easy to implement and able to decrease the test time, can be included in the routine of parametric tests. This work confirms the validity of this indicator and presents case studies related to BCD technology.