학술논문
New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation
Document Type
Conference
Source
International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on. :111-114 1994
Subject
Language
Abstract
A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro defects induced by ion implantation and applications using this technique to the failure analysis of MOS device fabrication are presented.