학술논문
Self-turn-on-free 1200V scaled CSTBT™ driven by 5V gate voltage with wide SOA
Document Type
Conference
Author
Source
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :23-26 May, 2021
Subject
Language
ISSN
1946-0201
Abstract
Scaled IGBT for 5V gate voltage operation is a key technology to reduce the V CEsat and the driver power consumption. In this paper, we experimentally demonstrate a self-turn-on free 1200V scaled CSTBT™ driven by 5V gate voltage. By using narrow mesa and fine n + -emitter pattern, low V CEsat and wide SOA was obtained. Also, high self-turn-on immunity even without negative gate bias was achieved owing to low C res /C ies ratio.