학술논문

Chip-to-Chip Hybrid Bonding with Larger-Oriented Cu Grains for µ-joints Beyond 100 K
Document Type
Conference
Source
2023 IEEE 73rd Electronic Components and Technology Conference (ECTC) ECTC Electronic Components and Technology Conference (ECTC), 2023 IEEE 73rd. :1713-1718 May, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Resistance
Electrodes
Electrochemical deposition
Semiconductor device measurement
Chemistry
Packaging
Size measurement
Cu grain size
Cu-SiO2 hybrid bonding
Language
ISSN
2377-5726
Abstract
The role of enlarged and relatively oriented Cu grains on Cu-SiO 2 hybrid bonding at chip level has been investigated. Larger Cu-grains in the Cu-Cu µ-joints were obtained by the modifying Cu electroplating chemistry. We were able to bring down the resistance of 5 µm square-size Cu-Cu µ-joints in as tight as 8 µm pitched intervals. The measured resistance of the single Cu-Cu µ-joint was around 5 mΩ and 8 mΩ, respectively for Cu electrodes with larger and normal Cu-grains. Thus, we were able to realize more than 30% reduction in the resistance value for the Cu µ-joints with larger Cu-grains. The lower resistance was attributed to the better interface quality of the Cu-Cu µ-joints facilitated by these enlarged and relatively oriented Cu-grains.