학술논문
A 72% PAE, 95-W, single-chip GaN FET S-band inverse class-F power amplifier with a harmonic resonant circuit
Document Type
Conference
Author
Source
2012 IEEE/MTT-S International Microwave Symposium Digest Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International. :1-3 Jun, 2012
Subject
Language
ISSN
0149-645X
Abstract
This paper describes a high-efficiency, high-output-power GaN power amplifier for S-band radar applications. The amplifier uses an inverse class-F configuration for high efficiency. The matching circuit includes a 2 nd harmonic resonant circuit to compensate for GaN FET parasitics. The developed GaN single-chip power amplifier delivers output power of 95 W with power added efficiency (PAE) of 72% and high linear gain of 19.8 dB at 2.6 GHz. To the best of our knowledge, this is the highest efficiency for S-band power amplifiers ever reported with nearly 100-W output power.