학술논문
Performance of GaAs on silicon power amplifier for wireless handset applications
Document Type
Conference
Author
Source
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) Microwave symposium digest Microwave Symposium Digest, 2002 IEEE MTT-S International. 2:1031-1034 vol.2 2002
Subject
Language
ISSN
0149-645X
Abstract
Recently RF devices formed by the epitaxial growth of GaAs on a Si substrate have been demonstrated. The RF performance of these new devices compares well with devices on a conventional GaAs substrate process. This new GaAs-on-Si technology has the potential for replacing expensive RF components such as power amplifiers with lower cost devices fabricated on GaAs-on-Si while still maintaining good DC-RF performance. This paper presents the RF performance of these GaAs/STO/Si devices and shows for the first time their viability as power amplifiers in wireless handsets.