학술논문

A unified model for AC bias temperature instability
Document Type
Conference
Source
2013 IEEE International Integrated Reliability Workshop Final Report Integrated Reliability Workshop Final Report (IRW), 2013 IEEE International. :84-87 Oct, 2013
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Stress
Mathematical model
Switches
Charge carrier processes
Monte Carlo methods
Logic gates
Equations
BTI charge trapping
reliability
MOSFET
Language
ISSN
1930-8841
2374-8036
Abstract
Usually AC Bias Temperature Instability is modeled as consisting of a recoverable and a permanent component, assuming these components originate from different physical mechanisms. In this work we introduce a model based on charge trapping and detrapping that can properly account for both components. Under switching bias (AC stress), fast traps are able to follow the bias point change, while slow traps act according to an equivalent time constant, not being able to follow the bias point change. We present an extension to our previous model to properly account for these effects, and we provide a simple compact model to help circuit designers to cope with both components of BTI due to charge trapping. Model is validated by comparison to experimental data and Monte Carlo simulations.