학술논문

Excitonic Features in the Optical Response of Layered Gallium Sulphide
Document Type
Conference
Source
2023 International Semiconductor Conference (CAS) Semiconductor Conference (CAS), 2023 International. :125-128 Oct, 2023
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Gallium
Optical design
Reconfigurable devices
Optical switches
Plasmons
Optical materials
Stability analysis
phase-change materials
ab-initio methods
gallium sulfide
excitonic effects.
Language
ISSN
2377-0678
Abstract
Lately, interest in phase-change materials has been renewed in order to design a new generation of active optical reconfigurable devices in combination with plasmonic technologies to achieve low consumption and ultrafast characteristics for a wide range of applications spanning from optical switches, photonic memories, logical gates, etc. Within the possible candidate materials, gallium sulphide exhibits desirable properties as a marked change in the optical properties between crystalline and amorphous phases, low losses at visible frequencies, stability in environmental conditions, to name a few. Therefore, an accurate description of its optical response is desirable to predict the behavior subject to external excitations. In this contribution we present the modelling of the dielectric function of crystalline GaS from ab-initio calculations, including excitonic effects to achieve quantitative agreement with experimental results.