학술논문
Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy
Document Type
Conference
Author
Source
1996 IEEE Nuclear Science Symposium. Conference Record Nuclear science and medical imaging Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE. 1:214-218 vol.1 1996
Subject
Language
ISSN
1082-3654
Abstract
Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of the depletion voltage which is observed after elevated temperature annealing of inverted detectors.