학술논문
Experimental Study of Deep Levels in MESFETs
Document Type
Conference
Author
Source
ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European. :563-566 Sep, 1996
Subject
Language
Abstract
We have induced the formation of deep levels in the active channel of GaAs MESFET's by exposing these devices to high fluence of energetic neutrons. A result, we have measured a modification of the main DC parameters, i.e. decrease of I DSS , gm and V p . By using an experimental technique based on the frequency dispersion of the device transconductance, gm(f), we have been able to indentify at least one of the type of the defects (U-band) introduced in the GaAs substrate by irradiation.