부산대학교 도서관

We compare facet morphology, device characteristics, and far field patterns (FFPs) for semipolar $({11}\bar{2}{2})$ laser diodes fabricated with mechanically polished and dry etched mirror facets. Facets formed by ${\rm Cl}_{2}$-based dry etching produced inclined and heavily striated facets. Mechanically polished facets, in contrast, provided vertical and smooth facets $({\rm rms~roughness}=5.2~{\rm nm})$. The threshold currents of polished facet devices were on average ${\sim}{100}$ and ${\sim}{\rm 200}~{\rm mA}$ lower than etched facet devices (2$\,\times\,$ 1200 $\mu{\rm m}^{2}$ and 4 $\,\times\,$1200 $\mu{\rm m}^{2}$ dimension devices, respectively). FFPs from etched facets were also shown to be obscured due to substrate reflections.