학술논문

Simulating Pseudomorphic HEMTs: Optimizing Performance to Achieve Multi-terahertz Operating Frequencies
Document Type
Conference
Source
2008 Device Research Conference Device Research Conference, 2008. :267-268 Jun, 2008
Subject
Components, Circuits, Devices and Systems
PHEMTs
HEMTs
MODFETs
Indium gallium arsenide
Indium compounds
Cutoff frequency
Monte Carlo methods
Indium phosphide
Logic devices
Electron devices
Language
ISSN
1548-3770
Abstract
In summary, we show that properly scaled HEMT devices can operate will into the THz regime, and provide a viable device option in this spectral region. These results are also important for logic devices desired for operation in the Tbs regime, as the cutoff frequency f T is intimately related to the logic delay time in a switching transistor.